Now I have made the thermal dissipation substrate for high power devices(LED, semiconductors).
AlN substrate has been used for the substrate for high power devices because it has high thermal conductivity. But its cost is high.
Using low cost via process, following structure is possible.
The glass microstructures by anisotropic wet etching has used for the test. Or glass/ceramic structures, too.
Recently I developed polyimide etching technologies.
The 30um thick polyimide layer was formed on copper plate and the polyimide vias were formed by special etching methods.
After that, the via fill was done from the bottom side of polyimide in the Cu plating bath.
Lower image is Cu bump for the unit device.
The power device like HBLED will be positioned on the large rectangular bumps.
AlN substrate has been used for the substrate for high power devices because it has high thermal conductivity. But its cost is high.
Using low cost via process, following structure is possible.
Recently I developed polyimide etching technologies.
The 30um thick polyimide layer was formed on copper plate and the polyimide vias were formed by special etching methods.
After that, the via fill was done from the bottom side of polyimide in the Cu plating bath.
Lower image is Cu bump for the unit device.
The power device like HBLED will be positioned on the large rectangular bumps.
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